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| Product Specification www.jmnic.com Silicon Power Transistors 2SC2246 DESCRIPTION High voltage ,high speed With TO-3 package APPLICATIONS Power switching Power amplification power driver PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Base current Total power dissipation Junction temperature Storage temperature Tmb=25ae CONDITIONS Open emitter Open base Open collector MAX 450 400 5 15 30 6 100 200 -65~200 ae ae UNIT V V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-mb PARAMETER Thermal resistance from junction to mounting base VALUE 1.0 UNIT ae /W JMnic Product Specification www.jmnic.com Silicon Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=0.1A ; L=25mH IC=6A IB=1.2A IC=6A IB=1.2A VCB=450V IE=0 TC=125ae VCE=400V IB=0 VEB=5V; IC=0 IC=6A ; VCE=5V 10 MIN 400 TYP. SYMBOL VCEO(SUS) VCEsat VBesat ICBO ICEO IEBO hFE 2SC2246 MAX UNIT V 1.2 1.5 1 4 5.0 1.0 V V mA mA mA Switching times ton ts tf Turn-on time Storage time Fall time IC=6A IB1=- IB2=1.2A 1.0 2.0 1.0 |I |I |I s s s JMnic Product Specification www.jmnic.com Silicon Power Transistors PACKAGE OUTLINE 2SC2246 Fig.2 Outline dimensions JMnic |
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